1 mar-18-2010 nchannel enhancement mode field effect transistor P1004BD to252 halogenfree & leadfree niko sem rev 1.3 absolute maximum ratings (t a = 25 c unless otherwise noted) parameters/test conditions symbol limits units drain-source voltage v ds 40 v gate-source voltage v gs 20 v t c = 25 c 55 continuous drain current t c = 70 c i d 44 pulsed drain current 1 i dm 120 avalanche current i as 38 a avalanche energy 2 l = 0.1mh e as 73 mj t c = 25 c 50 power dissipation t c = 70 c p d 32 w junction & storage temperature range t j , t stg -55 to 150 c thermal resistance ratings thermal resistance symbol typical maximum units junction-to-ambient r ja 62.5 junction-to-case r jc 2.5 c / w 1 pulse width limited by maximum junction temperature . 2 v dd = 20v . starting t j = 25?c. electrical characteristics (t j = 25 c, unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0v, i d = 250 a 40 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.7 2.0 3.0 v gate-body leakage i gss v ds = 0v, v gs = 20v 100 na v ds = 32v, v gs = 0v 1 zero gate voltage drain current i dss v ds = 30v, v gs = 0v, t j = 55 c 10 a product summary v (br)dss r ds(on) i d 40v 10m 55a 1. gate 2. drain 3. source g d s free datasheet http:///
2 mar-18-2010 nchannel enhancement mode field effect transistor P1004BD to252 halogenfree & leadfree niko sem rev 1.3 v gs = 5v, i d = 8a 13 17 drain-source on-state resistance 1 r ds(on) v gs = 10v, i d = 15a 8 10 m forward transconductance 1 g fs v ds = 10v, i d = 20a 25 s on-state drain current 1 i d(on) v ds = 10v , v gs = 10v, 120 a dynamic input capacitance c iss 1550 1750 output capacitance c oss 280 310 reverse transfer capacitance c rss v gs = 0v, v ds = 20v, f = 1mhz 185 200 pf gate resistance r g v gs = 15mv, v ds = 0v, f = 1mhz 1.5 2.5 total gate charge 2 q g 26 32 gate-source charge 2 q gs 6 8.5 gate-drain charge 2 q gd v ds = 0.5v (br)dss , v gs = 10v, i d = 20a 8 10 nc turn-on delay time 2 t d(on) 12 33 rise time 2 t r v ds = 20v , r l = 1 35 65 turn-off delay time 2 t d(off) i d ? 20a, v gs = 10v, r gen =6 37 fall time 2 t f 12 23 ns sourcedrain diode ratings and characteristics (t j = 25 c) continuous current i s 38 a forward voltage 1 v sd i f = 15a, v gs = 0v 0.7 1.3 v reverse recovery time t rr 75 ns reverse recovery charge qrr i f = 20a, dl f /dt = 100a / s 55 nc 1 pulse test : pulse width 300 sec, duty cycle 2%. 2 independent of operating temperature. remark: the product marked with P1004BD, date cod e or lot # free datasheet http:///
3 mar-18-2010 nchannel enhancement mode field effect transistor P1004BD to252 halogenfree & leadfree niko sem rev 1.3 v gs = 5v v gs = 10v 0 10 20 30 50 i d - drain current(a) on-resistance vs.drain current 0 0.004 0.008 0.012 0.016 0.020 0.024 0.028 0.032 r ds(on) - on-resistance( ) 40 crss coss ciss f=1mhz v gs =0v c - capacitance(pf) capacitance v ds - drain-to-source voltage(v) 0 0 5 10 15 20 25 30 2500 2000 1500 1000 500 0 4 8 12 16 20 24 28 0 2 4 6 8 10 v gs - gate-to-source voltage(v) gate charge q g - total gate charge (nc) i d = 20a v ds = 20v - 50 - 25 0 25 50 75 100 125 150 rdson x 0.6 t j - junction temperature(c ) rdson x 0.8 rdson x 1.0 rdson x 1.2 rdson x 1.4 rdson x 1.6 rdson x 1.8 r ds(on) - on-resistance (normalized) on-resistance vs. junction temperature v gs = 10v i d = 20a 25 c t c =125 c 0 5 10 15 20 25 transfer characteristics 30 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v gs - gate-to-source voltage(v) i d - drain current(a) t c =-20 c 0 1 2 3 4 5 0 5 10 15 20 25 output characteristics 30 i d - drain current(a) v ds - drain-to-source voltage(v) v gs = 5v v gs = 3v v gs = 10v free datasheet http:///
4 mar-18-2010 nchannel enhancement mode field effect transistor P1004BD to252 halogenfree & leadfree niko sem rev 1.3 single pulse maximun power dissipation 0 500 1000 1500 2000 2500 3000 0.0001 0.001 0.01 0.1 1 10 sigle pulse tim e (s) power(w) single pulse r jc = 2.5 ? ?? ? c/w t c =25 ? ?? ? c safe operating area 1ms 100us 1s dc 100m s 10m s 1 10 100 1000 0.1 1 10 100 v ds , drainsource voltage [v] i d , drain current [a] note : 1.v gs = 10v 2.t c =25 ? ?? ? c 3.r jc = 2.5 ? ?? ? c/w 4.single pulse operation in this area is lim ited by r ds(on) 0 2 4 6 8 10 0.00 0.01 0.02 0.03 0.04 0.05 i d = 15a on-resistance vs.gate-to-source voltage v gs - gate-to-source voltage(v) r ds(on) - on-resistance( ) 20 i d = 250 a t j - temperature(c) threshold voltage -50 -25 0 25 50 75 100 125 150 v gs(th) variance(v) vth+0.2 vth+0.0 vth+0.4 vth-0.2 vth-0.4 vth-0.6 vth-0.8 vth-1.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.0e+01 v sd - source-to-drain voltage(v) i s - source current(a) source - drain diode forward voltage 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 1.0e-05 1.0e+02 t j =25 c t j =150 c free datasheet http:///
5 mar-18-2010 nchannel enhancement mode field effect transistor P1004BD to252 halogenfree & leadfree niko sem rev 1.3 free datasheet http:///
6 mar-18-2010 nchannel enhancement mode field effect transistor P1004BD to252 halogenfree & leadfree niko sem rev 1.3 free datasheet http:///
7 mar-18-2010 nchannel enhancement mode field effect transistor P1004BD to252 halogenfree & leadfree niko sem rev 1.3 free datasheet http:///
8 mar-18-2010 nchannel enhancement mode field effect transistor P1004BD to252 halogenfree & leadfree niko sem rev 1.3 free datasheet http:///
9 mar-18-2010 nchannel enhancement mode field effect transistor P1004BD to252 halogenfree & leadfree niko sem rev 1.3 free datasheet http:///
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